دیتاشیت TPH1R306PL,L1Q
مشخصات دیتاشیت
| نام دیتاشیت |
TPH1R306PL,L1Q
|
| حجم فایل |
51.401
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
TOSHIBA TPH1R306PL,L1Q
-
Power Dissipation (Pd):
960mW;170W
-
Total Gate Charge (Qg@Vgs):
91nC@10V
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Input Capacitance (Ciss@Vds):
8100pF@30V
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Continuous Drain Current (Id):
100A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.5V@1mA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
1.34mΩ@50A,10V
-
Package:
SOP-8
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Manufacturer:
TOSHIBA
